Degree, academic rank, position:
Doctor of Physical and Mathematical Sciences, Professor of Solid State Physics and Nanostructures of the Voronezh State University

Scientific specialty Diploma of Doctor of Science:
01.04.10 – physics of semiconductors

Basic biographical data:
1946 – the year of birth
1969 – end of the Faculty of Physics, Voronezh State University
1978 – defended his thesis on physical and mathematical sciences
1994 – PhD in physical and mathematical sciences
1999 – assignment of the title of professor
2007 – Member of the Russian Academy of Natural Sciences
2008 – honorary Worker of Higher Professional Education of the Russian Federation

Research interests:
The Atomic and Electronic Structure; Condensed Matter Physics; Semiconductors and Heterostructures; Thin Films; Nanomaterials and Nanostructures; Methods of Diagnosis of Solids; Ultrasoft X-ray Spectroscopy; Diffraction; Synchrotron radiation

Number of published works:
more than 300

The most significant publications:

  1. X-ray Absorption Near-edge Structure Anomalous Behaviour in Structures With Buried Layers Containing Silicon Nanocrystals // Journal of Synchrotron Radiation. 2014. V. 21. P. 209 - 214. / Co-authors: V.A. Terekhov, D.I. Tetelbaum, D.E. Spirin, K.N. Pankov, A.N. Mikhailov, A.I. Belov, A.V. Ershov and S.Yu. Turishchev
  2. Features of the Electronic and Atomic Structure of Silicon Nanocrystals in a Matrix of Aluminum // Fiz. 2014. V. 56. No. 12. AS - 2452 - 2456. / Co-authors: S.K. Lazaruk, D.S. Usoltseva, A.A. Leshok, P.S. Katsuba, I.E. Zanin, D.E. Spirin, A.A.S tepanova, S.Yu. Turischev
  3. The Effect of Implantation of Carbon on the Phase Composition of the Films SiO2: nc-Si/Si According to the Near-edge X-ray Absorption Structure // Condensed Matter and Interphase Boundaries. 2013. V. 15. No. 1. S. 48 - 53. / Co-authors: D.I. Tetelbaum, S.Y. Tourischev, D.E. Spirin, K.N. Pankov, D.N. Nesterov, A. Mikhailov, A.I. Belov, A.V. Ershov.
  4. Synchrotron Study Multilayer Structures Nanoperiodicheskih Si/Mo/Si... c-Si (100) // Fiz. 2013. V. 55. № 3. C - 577 - 584./ Co-authors: E.P. Domashevskaya, S.Y. Tourischev, D.A. Koyuda, N.A. Rumyantseva, Y.P. Pershin, V. Kondratenko, N. Appathurai
  5. Surface Modification and Oxidation of Si Wafers after Low Energy Plasma Treatment in Hydrogen, Helium and Argon // Materials Science in Semiconductor Processing. 2013. V. 16. Iss. 6. P. 1377 - 1381. / Co-authors : S.Yu. Turishchev, E.V. Parinova, O.V. Korolik, A.V. Mazanik, A.K. Fedotov
  6. Synchrotron Investigation of the Multilayer Nanoperiodical Al2O3/SiO/Al2O3/SiO: Si structure formation / Co-authors: S.Yu. Turishchev, VADA Koyuda, K.N. Pankov, E.P. Domashevskaya, A.V. Ershov, I.A. Chugrov and A.I. Mashin // Surface and Interface Analysis. 2012. V. 44. P. 1182 - 1186.
  7. Interference Phenomena of Synchrotron Radiation in TEY Epectra for Silicon-on-Insulator Structure // Journal of Synchrotron Radiation. 2012. V. 19. P. 609 - 618. / Co-authors: M.A. Andreeva, E.P. Domashevskaya, E.E. Odintsova, V.A. Terekhov, S.Yu. Turishchev
  8. Interference of Synchrotron Radiation Near the Absorption Edge of Silicon in Silicon-on-Insulator // Surface. X-ray and Neutron Synchron Investigations. 2011. No. 2. P. 42-50. I / Co-authors: E.P. Domashevskaya, S.Y. Tourischev
  9. XPS Studies of the Oxidation of Nanoscale Films of Ni / Si (100 // Journal Structural Chemistry: Application .2011. V. 52. P. 119-125.) / Co-authors: E.P. Domashevskaya, S.V. Ryabtsev, A.S. Lenshin, F.M. Chernyshov, A.T. Kazakov, A.V. Sidashovym
  10. Features of the Electron Energy Structure of the Surface Layers of Porous Silicon Formed on p-type Substrates // Factory Laboratory. Diagnosis Materials. 2011. V. 77. B. 1. P. 42 - 48. / Co-authors: E.P. Domashevskaya, S.Y. Tourischev, D.A. Khoviv, E.V. Parinova, V.A. Skryshevskii, I.V. Gavrilchenko.
  11. Structure of the Near-Surface Layer of c-Si Wafers Subjected to Low-temperature Low-energy Ion-beam Treatment // Phys. Status Solidi C. 2011. V. 8. No. 3. P. 739-742. / Co-authors: A. Fedotov, I. Ivashkevich, S. Kobeleva, O. Korolik, A. Mazanik, N. Stas'kov and S. Turishchev
  12. Synchrotron Studies of the Electronic and Atomic Structure of the Surface Layers of Silicon Oxide Films Containing Silicon Nanocrystals // Surface. X-ray, Synchrotron and Neutron Research. 2011. V. 10. P. 46 - 55. / Co-authors: S.Y. Tourischev, K.N. Pankov, I.E. Zanin, E.P. Domashevskaya, D.I. Tetelbaum, A.N. Mikhailov, A.I. Belov, D.E. Nikolichev
  13. Synchrotron Investigation of the Multilayer Nanoperiodical Al2O3/SiO/Al2O3/SiO...Si Structure Formation // SURFACE AND INTERFACE ANALYSIS. 2012. V. 44. No 8. SI. P. 1182-1186. Co-authors: Turishchev S. Yu., Koyuda D. A., et al.
  14. Surface Modification and Oxidation of Si Wafers after Low Energy Plasma Treatment in Hydrogen, Helium and Argon // MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2013. V. 16. No 6. P. 1377-1381. Co-authors: Turishchev S. Yu., Parinova E. V., et al.
  15. X-ray Absorption Near-Edge Structure Anomalous Behaviour in Structures with Buried Layers Containing Silicon Nanocrystals // JOURNAL OF SYNCHROTRON RADIATION. 2014. V. 21. P. 209-214. Co-authors: Tetelbaum D. I., Spirin D. E., et al.
  16. Peculiarities of the Electronic Structure and Phase Composition of Amorphous (SiO2) (x) (a-Si: H) (x-1) Composite Films According to X-ray Spectroscopy Data // TECHNICAL PHYSICS LETTERS. 2015. V. 41. No 10. P. 1010-1012. Co-authors: Parinova E. V., Domashevskaya E. P., et al.
  17. Composition and Optical Properties of Amorphous a-SiOx:H Films with Silicon Nanoclusters // SEMICONDUCTORS. 2016. V. 50. No 2. P. 212-216. Co-authors: Terukov E. I., Undalov Yu. K., et al.
  18. Electronic Structure and Phase Composition of Dielectric Interlayers in Multilayer Amorphous Nanostructure [(CoFeB)(60)C-40/SiO2](200) // PHYSICS OF THE SOLID STATE. 2017. V. 59. No 1. P. 168-173.  Co-authors: Domashevskaya E. P., Builov N. S., et al.
  19. Formation of Silicon Nanocrystals in Multilayer Nanoperiodic a-SiOx/Insulator Structures from the Results of Synchrotron Investigations // SEMICONDUCTORS. 2017. V. 51. No 3. P. 349-352. Co-authors: Turishchev S. Yu., Koyuda D. A., et al.
  20. Electronic Structure and Phase Composition of Silicon Oxide in the Metal-Containing Composite Layers of a [(Co40Fe40B20)(34)(SiO2)(66)/C](46) Multilayer Amorphous Nanostructure with Carbon Interlayers // INORGANIC MATERIALS. 2017. V. 53. No. 9. P. 930-936. Co-authors: Domashevskaya E. P., Builov N. S., et al.

Number of trained PhDs:
1 doctor and 6 candidates

Courses:
Physical Basis of Electronics; Physical Basis of Micro- and Nanotechnology; Nanoelectronics; Nano-diagnostics, X-ray and Electron Spectroscopy

Organizational and social work:

  1. Deputy Chairman of the Dissertation Council D 212.038.06.
  2. A member of the Dissertation Council D 212.038.10.
  3. A member of the Dissertation Council D 212.037.06.
  4. A member of the Scientific Council of the Faculty of Physics, Voronezh State University.
  5. Member of the Editorial Board of the Journal "CONDENSED MATTER AND INTERPHASES"

H-index (RSCI) – 12

H-index (Web of Science) – 11

H-index (Scopus) – 11

Contacts:
ftt@phys.vsu.ru
+7(4732) 208546